Mesoscopic tunneling magnetoresistance
نویسندگان
چکیده
We study spin-dependent transport through ferromagnet/normal-metal/ferromagnet double tunnel junctions in the mesoscopic Coulomb-blockade regime. We calculate the conductance in the absence or presence of spin-orbit interaction and for arbitrary orientation of the lead magnetizations. The tunneling magnetoresistance ~TMR!, defined at the Coulomb-blockade conductance peaks, is calculated and its probability distribution presented. We show that mesoscopic fluctuations can lead to the optimal value of the TMR and that the conductance in noncollinear configurations gives information about how the spin rotates inside the grain.
منابع مشابه
Spin effects in single electron tunneling
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions – single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin tr...
متن کاملAnisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions
The effects of the spin-orbit coupling SOC on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance TAMR are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interfer...
متن کاملResonant inversion of tunneling magnetoresistance.
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven stati...
متن کاملSpin-polarized tunneling through randomly transparent magnetic junctions: Reentrant magnetoresistance approaching the Jullière limit
Electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is studied within Glauber-eikonal approximation enabling exact disorder ensemble averaging by means of the Holtsmark– Markov method. This allows us to address a hitherto unexplored regime of the tunneling magnetoresistance effect characterized by the crossover from k conserving to random tunneling k is the...
متن کاملT\inneling Magnetoresistance in a Two-Layered La^^Ca^^MnjO Polycrystal
The discovery of giant magnetoresistance (GMR) in magnetic multilayer films [1 -2 ] and granular solids [3 4] has triggered considerable interest in relating the spin-dependent transport phenomena from the viewpoint of both the underlying physics and their immediate application to magnetic storage and sensor technology. A number of the GMR structures have so far been studied, such as magnetic m...
متن کامل